Good Eggs: Nanomagnets Offer Food for Thought About Computer Memories

For a study described in a new paper, NIST researchers used electron-beam lithography to make thousands of nickel-iron magnets, each about 200 nanometers (billionths of a meter) in diameter. Each magnet is ordinarily shaped like an ellipse, a slightly flattened circle. Researchers also made some magnets in three different egglike shapes with an increasingly pointy end. It's all part of NIST research on nanoscale magnetic materials, devices and measurement methods to support development of future magnetic data storage systems.

It turns out that even small distortions in magnet shape can lead to significant changes in magnetic properties. Researchers discovered this by probing the magnets with a laser and analyzing what happens to the"spins" of the electrons, a quantum property that's responsible for magnetic orientation. Changes in the spin orientation can propagate through the magnet like waves at different frequencies. The more egg-like the magnet, the more complex the wave patterns and their related frequencies. (Something similar happens when you toss a pebble in an asymmetrically shaped pond.) The shifts are most pronounced at the ends of the magnets.

To confirm localized magnetic effects and"color" the eggs, scientists made simulations of various magnets using NIST's object-oriented micromagnetic framework (OOMMF). Lighter colors indicate stronger frequency signals.

The egg effects explain erratic behavior observed in large arrays of nanomagnets, which may be imperfectly shaped by the lithography process. Such distortions can affect switching in magnetic devices. The egg study results may be useful in developing random-access memories (RAM) based on interactions between electron spins and magnetized surfaces. Spin-RAM is one approach to making future memories that could provide high-speed access to data while reducing processor power needs by storing data permanently in ever-smaller devices. Shaping magnets like eggs breaks up a symmetric frequency pattern found in ellipse structures and thus offers an opportunity to customize and control the switching process.

"For example, intentional patterning of egg-like distortions into spinRAM memory elements may facilitate more reliable switching," says NIST physicist Tom Silva, an author of the new paper.

"Also, this study has provided the Easter Bunny with an entirely new market for product development."

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Super-Small Transistor Created: Artificial Atom Powered by Single Electrons

The researchers report inNature Nanotechnologythat the transistor's central component -- an island only 1.5 nanometers in diameter -- operates with the addition of only one or two electrons. That capability would make the transistor important to a range of computational applications, from ultradense memories to quantum processors, powerful devices that promise to solve problems so complex that all of the world's computers working together for billions of years could not crack them.

In addition, the tiny central island could be used as an artificial atom for developing new classes of artificial electronic materials, such as exotic superconductors with properties not found in natural materials, explained lead researcher Jeremy Levy, a professor of physics and astronomy in Pitt's School of Arts and Sciences. Levy worked with lead author and Pitt physics and astronomy graduate student Guanglei Cheng, as well as with Pitt physics and astronomy researchers Feng Bi, Daniela Bogorin,and Cheng Cen. The Pitt researchers worked with a team from the University of Wisconsin at Madison led by materials science and engineering professor Chang-Beom Eom, including research associates Chung Wun Bark, Jae-Wan Park, and Chad Folkman. Also part of the team were Gilberto Medeiros-Ribeiro, of HP Labs, and Pablo F. Siles, a doctoral student at the State University of Campinas in Brazil.

Levy and his colleagues named their device SketchSET, or sketch-based single-electron transistor, after a technique developed in Levy's lab in 2008 that works like a microscopic Etch A Sketch^TM, the drawing toy that inspired the idea. Using the sharp conducting probe of an atomic force microscope, Levy can create such electronic devices as wires and transistors of nanometer dimensions at the interface of a crystal of strontium titanate and a 1.2 nanometer thick layer of lanthanum aluminate. The electronic devices can then be erased and the interface used anew.

The SketchSET -- which is the first single-electron transistor made entirely of oxide-based materials -- consists of an island formation that can house up to two electrons. The number of electrons on the island -- which can be only zero, one, or two -- results in distinct conductive properties. Wires extending from the transistor carry additional electrons across the island.

One virtue of a single-electron transistor is its extreme sensitivity to an electric charge, Levy explained. Another property of these oxide materials is ferroelectricity, which allows the transistor to act as a solid-state memory. The ferroelectric state can, in the absence of external power, control the number of electrons on the island, which in turn can be used to represent the 1 or 0 state of a memory element. A computer memory based on this property would be able to retain information even when the processor itself is powered down, Levy said. The ferroelectric state also is expected to be sensitive to small pressure changes at nanometer scales, making this device potentially useful as a nanoscale charge and force sensor.

The research inNature Nanotechnologyalso was supported in part by grants from the U.S. Defense Advanced Research Projects Agency (DARPA), the U.S. Army Research Office, the National Science Foundation, and the Fine Foundation.

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New Spin on Graphene Makes It Magnetic

The results, reported inScience, could be a potentially huge breakthrough in the field of spintronics.

Spintronics is a group of emerging technologies that exploit the intrinsic spin of the electron, in addition to its fundamental electric charge that is exploited in microelectronics.

Billions of spintronics devices such as sensors and memories are already being produced. Every hard disk drive has a magnetic sensor that uses a flow of spins, and magnetic random access memory (MRAM) chips are becoming increasingly popular.

The findings are part of a large international effort involving research groups from the US, Russia, Japan and the Netherlands.

The key feature for spintronics is to connect the electron spin to electric current as current can be manipulated by means routinely used in microelectronics.

It is believed that, in future spintronics devices and transistors, coupling between the current and spin will be direct, without using magnetic materials to inject spins as it is done at the moment.

So far, this route has only been demonstrated by using materials with so-called spin-orbit interaction, in which tiny magnetic fields created by nuclei affect the motion of electrons through a crystal. The effect is generally small which makes it difficult to use.

The researchers found a new way to interconnect spin and charge by applying a relatively weak magnetic field to graphene and found that this causes a flow of spins in the direction perpendicular to electric current, making a graphene sheet magnetised.

The effect resembles the one caused by spin-orbit interaction but is larger and can be tuned by varying the external magnetic field.

The Manchester researchers also show that graphene placed on boron nitride is an ideal material for spintronics because the induced magnetism extends over macroscopic distances from the current path without decay.

The team believes their discovery offers numerous opportunities for redesigning current spintronics devices and making new ones such as spin-based transistors.

Professor Geim said:"The holy grail of spintronics is the conversion of electricity into magnetism or vice versa.

"We offer a new mechanism, thanks to unique properties of graphene. I imagine that many venues of spintronics can benefit from this finding."

Antonio Castro Neto, a physics professor from Boston who wrote a news article for theSciencemagazine which accompanies the research paper commented:"Graphene is opening doors for many new technologies.

"Not surprisingly, the 2010 Nobel Physics prize was awarded to Andre Geim and Kostya Novoselov for their groundbreaking experiments in this material.

"Apparently not satisfied with what they have accomplished so far, Geim and his collaborators have now demonstrated another completely unexpected effect that involves quantum mechanics at ambient conditions. This discovery opens a new chapter to the short but rich history of graphene."

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New Way to Control Magnetic Properties of Graphene Discovered

The finding by a team of Maryland researchers, led by Physics Professor Michael S. Fuhrer of the UMD Center for Nanophysics and Advanced Materials is the latest of many amazing properties discovered for graphene.

A honeycomb sheet of carbon atoms just one atom thick, graphene is the basic constituent of graphite. Some 200 times stronger than steel, it conducts electricity at room temperature better than any other known material (a 2008 discovery by Fuhrer, et. al). Graphene is widely seen as having great, perhaps even revolutionary, potential for nanotechnology applications. The 2010 Nobel Prize in physics was awarded to scientists Konstantin Novoselov and Andre Geim for their 2004 discovery of how to make graphene.

In their new graphene discovery, Fuhrer and his University of Maryland colleagues have found that missing atoms in graphene, called vacancies, act as tiny magnets -- they have a"magnetic moment." Moreover, these magnetic moments interact strongly with the electrons in graphene which carry electrical currents, giving rise to a significant extra electrical resistance at low temperature, known as the Kondo effect. The results appear in the paper"Tunable Kondo effect in graphene with defects" published this month inNature Physics.

The Kondo effect is typically associated with adding tiny amounts of magnetic metal atoms, such as iron or nickel, to a non-magnetic metal, such as gold or copper. Finding the Kondo effect in graphene with vacancies was surprising for two reasons, according to Fuhrer.

"First, we were studying a system of nothing but carbon, without adding any traditionally magnetic impurities. Second, graphene has a very small electron density, which would be expected to make the Kondo effect appear only at extremely low temperatures," he said.

The team measured the characteristic temperature for the Kondo effect in graphene with vacancies to be as high as 90 Kelvin, which is comparable to that seen in metals with very high electron densities. Moreover the Kondo temperature can be tuned by the voltage on an electrical gate, an effect not seen in metals. They theorize that the same unusual properties of that result in graphene's electrons acting as if they have no mass also make them interact very strongly with certain kinds of impurities, such as vacancies, leading to a strong Kondo effect at a relatively high temperature.

Fuhrer thinks that if vacancies in graphene could be arranged in just the right way, ferromagnetism could result."Individual magnetic moments can be coupled together through the Kondo effect, forcing them all to line up in the same direction," he said.

"The result would be a ferromagnet, like iron, but instead made only of carbon. Magnetism in graphene could lead to new types of nanoscale sensors of magnetic fields. And, when coupled with graphene's tremendous electrical properties, magnetism in graphene could also have interesting applications in the area of spintronics, which uses the magnetic moment of the electron, instead of its electric charge, to represent the information in a computer.

"This opens the possibility of 'defect engineering' in graphene -- plucking out atoms in the right places to design the magnetic properties you want," said Fuhrer.

This research was supported by grants from the National Science Foundation and the Office of Naval Research.

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Quantum Mapmakers Complete First Voyage Through Spin Liquid

Until now there has been very limited information describing the physical characteristics of a quantum spin liquid state, but researchers from Oxford University's Department of Physics working with the Rutherford Appleton Laboratory have demonstrated the effect of temperature and magnetic field on this state of matter. The results are published in aNaturepaper.

The scientists mapped quantum spin liquid by implanting muons -- sub-atomic particles which come from space but can also be produced in particle accelerators -- into the spin liquid in order to measure the microscopic magnetism. The experiments used the muon sources at ISIS in Oxfordshire and the Paul Scherrer Institute in Switzerland.

Professor Stephen Blundell of the Department of Physics explained: 'Muons are an excellent tool for this kind of study because they are a very sensitive probe of weak magnetism and fluctuating states, just as we have now found in mapping the spin liquid state.'

The quantum spin liquid state is found in 70 milligrams of tiny black crystals of an organic material cooled to just a couple of hundredths of a degree above absolute zero. Inside the material, magnetic atoms are arranged on triangular grids and behave as 'quantum spins'. The interactions between these spins make them liquid-like, so they never freeze into one configuration. This behaviour is completely different to that of more familiar magnets found in everyday life in which, at some particular temperature, the quantum spins become locked into a particular configuration.

Dr Tom Lancaster of the Department of Physics said: 'The organic material we have used is a really remarkable compound. This is because its interactions seem perfectly tuned to achieve this spin liquid state.'

Dr Francis Pratt of the Rutherford Appleton Laboratory said: 'Since the idea was proposed there have been over 800 papers published speculating on the properties of quantum spin liquids, but until now there has been very little experimental evidence to compare these ideas with.'

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Self-Cooling Observed in Graphene Elctronics

Led by mechanical science and engineering professor William King and electrical and computer engineering professor Eric Pop, the team will publish its findings in the April 3 advance online edition of the journalNature Nanotechnology.

The speed and size of computer chips are limited by how much heat they dissipate. All electronics dissipate heat as a result of the electrons in the current colliding with the device material, a phenomenon called resistive heating. This heating outweighs other smaller thermoelectric effects that can locally cool a device. Computers with silicon chips use fans or flowing water to cool the transistors, a process that consumes much of the energy required to power a device.

Future computer chips made out of graphene -- carbon sheets 1 atom thick -- could be faster than silicon chips and operate at lower power. However, a thorough understanding of heat generation and distribution in graphene devices has eluded researchers because of the tiny dimensions involved.

The Illinois team used an atomic force microscope tip as a temperature probe to make the first nanometer-scale temperature measurements of a working graphene transistor. The measurements revealed surprising temperature phenomena at the points where the graphene transistor touches the metal connections. They found that thermoelectric cooling effects can be stronger at graphene contacts than resistive heating, actually lowering the temperature of the transistor.

"In silicon and most materials, the electronic heating is much larger than the self-cooling," King said."However, we found that in these graphene transistors, there are regions where the thermoelectric cooling can be larger than the resistive heating, which allows these devices to cool themselves. This self-cooling has not previously been seen for graphene devices."

This self-cooling effect means that graphene-based electronics could require little or no cooling, begetting an even greater energy efficiency and increasing graphene's attractiveness as a silicon replacement.

"Graphene electronics are still in their infancy; however, our measurements and simulations project that thermoelectric effects will become enhanced as graphene transistor technology and contacts improve" said Pop, who is also affiliated with the Beckman Institute for Advanced Science, and the Micro and Nanotechnology Laboratory at the U. of I.

Next, the researchers plan to use the AFM temperature probe to study heating and cooling in carbon nanotubes and other nanomaterials.

King also is affiliated with the department of materials science and engineering, the Frederick Seitz Materials Research Laboratory, the Beckman Institute, and the Micro and Nanotechnology Laboratory.

The Air Force Office of Scientific Research and the Office of Naval Research supported this work. Co-authors of the paper included graduate student Kyle Grosse, undergraduate Feifei Lian and postdoctoral researcher Myung-Ho Bae.

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Templated Growth Technique Produces Graphene Nanoribbons With Metallic Properties

"We can now make very narrow, conductive nanoribbons that have quantum ballistic properties," said Walt de Heer, a professor in the School of Physics at the Georgia Institute of Technology."These narrow ribbons become almost like a perfect metal. Electrons can move through them without scattering, just like they do in carbon nanotubes."

De Heer was scheduled to discuss recent results of this graphene growth process March 21st at the American Physical Society's March 2011 Meeting in Dallas. The research was sponsored by the National Science Foundation-supported Materials Research Science and Engineering Center (MRSEC).

First reported Oct. 3 in the advance online edition of the journal Nature Nanotechnology, the new fabrication technique allows production of epitaxial graphene structures with smooth edges. Earlier fabrication techniques that used electron beams to cut graphene sheets produced nanoribbon structures with rough edges that scattered electrons, causing interference. The resulting nanoribbons had properties more like insulators than conductors.

"In our templated growth approach, we have essentially eliminated the edges that take away from the desirable properties of graphene," de Heer explained."The edges of the epitaxial graphene merge into the silicon carbide, producing properties that are really quite interesting."

The"templated growth" technique begins with etching patterns into the silicon carbide surfaces on which epitaxial graphene is grown. The patterns serve as templates directing the growth of graphene structures, allowing the formation of nanoribbons and other structures of specific widths and shapes without the use of cutting techniques that produce the rough edges.

In creating these graphene nanostructures, de Heer and his research team first use conventional microelectronics techniques to etch tiny"steps" -- or contours -- into a silicon carbide wafer whose surface has been made extremely flat. They then heat the contoured wafer to approximately 1,500 degrees Celsius, which initiates melting that polishes any rough edges left by the etching process.

Established techniques are then used for growing graphene from silicon carbide by driving off the silicon atoms from the surface. Instead of producing a consistent layer of graphene across the entire surface of the wafer, however, the researchers limit the heating time so that graphene grows only on portions of the contours.

The width of the resulting nanoribbons is proportional to the depth of the contours, providing a mechanism for precisely controlling the nanoribbon structures. To form complex structures, multiple etching steps can be carried out to create complex templates.

"This technique allows us to avoid the complicated e-beam lithography steps that people have been using to create structures in epitaxial graphene," de Heer noted."We are seeing very good properties that show these structures can be used for real electronic applications."

Since publication of the Nature Nanotechnology paper, de Heer's team has been refining its technique."We have taken this to an extreme -- the cleanest and narrowest ribbons we can make," he said."We expect to be able to do everything we need with the size ribbons that we are able to make right now, though we probably could reduce the width to 10 nanometers or less."

While the Georgia Tech team is continuing to develop high-frequency transistors -- perhaps even at the terahertz range -- its primary effort now focuses on developing quantum devices, de Heer said. Such devices were envisioned in the patents Georgia Tech holds on various epitaxial graphene processes.

"This means that the way we will be doing graphene electronics will be different," he explained."We will not be following the model of using standard field-effect transistors (FETs), but will pursue devices that use ballistic conductors and quantum interference. We are headed straight into using the electron wave effects in graphene."

Taking advantage of the wave properties will allow electrons to be manipulated with techniques similar to those used by optical engineers. For instance, switching may be carried out using interference effects -- separating beams of electrons and then recombining them in opposite phases to extinguish the signals.

Quantum devices would be smaller than conventional transistors and operate at lower power. Because of its ability to transport electrons with virtually no resistance, epitaxial graphene may be the ideal material for such devices, de Heer said.

"Using the quantum properties of electrons rather than the standard charged-particle properties means opening up new ways of looking at electronics," he predicted."This is probably the way that electronics will evolve, and it appears that graphene is the ideal material for making this transition."

De Heer's research team hopes to demonstrate a rudimentary switch operating on the quantum interference principle within a year.

Epitaxial graphene may be the basis for a new generation of high-performance devices that will take advantage of the material's unique properties in applications where higher costs can be justified. Silicon, today's electronic material of choice, will continue to be used in applications where high-performance is not required, de Heer said.

"This is an important step in the process," he added."There are going to be a lot of surprises as we move into these quantum devices and find out how they work. We have good reason to believe that this can be the basis for a new generation of transistors based on quantum interference."

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Room-Temperature Spintronic Computers Coming Soon? Silicon Spin Transistors Heat Up and Spins Last Longer

"Electronic devices mostly use the charge of the electrons -- a negative charge that is moving," says Ashutosh Tiwari, an associate professor of materials science and engineering at the University of Utah."Spintronic devices will use both the charge and the spin of the electrons. With spintronics, we want smaller, faster and more power-efficient computers and other devices."

Tiwari and Ph.D. student Nathan Gray report their creation of room-temperature, spintronic transistors on a silicon semiconductor this month in the journalApplied Physics Letters. The research -- in which electron"spin" aligned in a certain way was injected into silicon chips and maintained for a record 276 trillionths of a second -- was funded by the National Science Foundation.

"Almost every electronic device has silicon-based transistors in it," Gray says."The current thrust of industry has been to make those transistors smaller and to add more of them into the same device" to process more data. He says his and Tiwari's research takes a different approach.

"Instead of just making transistors smaller and adding more of them, we make the transistors do more work at the same size because they have two different ways {electron charge and spin} to manipulate and process data," says Gray.

A Quick Spin through Spintronics

Modern computers and other electronic devices work because negatively charged electrons flow as electrical current. Transistors are switches that reduce computerized data to a binary code of ones or zeros represented by the presence or absence of electrons in semiconductors, most commonly silicon.

In addition to electric charge, electrons have another property known as spin, which is like the electron's intrinsic angular momentum. An electron's spin often is described as a bar magnet that points up or down, which also can represent ones and zeroes for computing.

Most previous research on spintronic transistors involved using optical radiation -- in the form of polarized light from lasers -- to orient the electron spins in non-silicon materials such as gallium arsenide or organic semiconductors at supercold temperatures.

"Optical methods cannot do that with silicon, which is the workhorse of the semiconductor and electronics industry, and the industry doesn't want to retool for another material," Tiwari says.

"Spintronics will become useful only if we use silicon," he adds.

The Experiment

In the new study, Tiwari and Gray used electricity and magnetic fields to inject"spin polarized carriers" -- namely, electrons with their spins aligned either all up or all down -- into silicon at room temperature.

Their trick was to use magnesium oxide as a"tunnel barrier" to get the aligned electron spins to travel from one nickel-iron electrode through the silicon semiconductor to another nickel-iron electrode. Without the magnesium oxide, the spins would get randomized almost immediately, with half up and half down, Gray says.

"This thing works at room temperature," Tiwari says."Most of the devices in earlier studies have to be cooled to very low temperatures" -- colder than 200 below zero Fahrenheit -- to align the electrons' spins either all up or all down."Our new way of putting spin inside the silicon does not require any cooling."

The experiment used a flat piece of silicon about 1 inch long, about 0.3 inches wide and one-fiftieth of an inch thick. An ultra-thin layer of magnesium oxide was deposited on the silicon wafer. Then, one dozen tiny transistors were deposited on the silicon wafer so they could be used to inject electrons with aligned spins into the silicon and later detect them.

Each nickel-iron transistor had three contacts or electrodes: one through which electrons with aligned spins were injected into the silicon and detected, a negative electrode and a positive electrode used to measure voltage.

During the experiment, the researchers send direct current through the spin-injector electrode and negative electrode of each transistor. The current is kept steady, and the researchers measure variations in voltage while applying a magnetic field to the apparatus

"By looking at the change in the voltage when we apply a magnetic field, we can find how much spin has been injected and the spin lifetime," Tiwari says.

A 328 Nanometer, 276 Picosecond Step for Spintronics

For spintronic devices to be practical, electrons with aligned spins need to be able to move adequate distances and retain their spin alignments for an adequate time.

During the new study, the electrons retained their spins for 276 picoseconds, or 276 trillionths of a second. And based on that lifetime, the researchers calculate the spin-aligned electrons moved through the silicon 328 nanometers, which is 328 billionths of a meter or about 13 millionths of an inch.

"It's a tiny distance for us, but in transistor technology, it is huge," Gray says."Transistors are so small today that that's more than enough to get the electron where we need it to go."

"Those are very good numbers," Tiwari says."These numbers are almost 10 times bigger than what we need {for spintronic devices} and two times bigger than if you use aluminum oxide" instead of the magnesium oxide in his study.

He says Dutch researchers previously were able to inject aligned spins into silicon using aluminum oxide as the"tunneling medium," but the new study shows magnesium oxide works better.

The new study's use of electronic spin injection is much more practical than using optical methods such as lasers because lasers are too big for chips in consumer electronic devices, Tiwari says.

He adds that spintronic computer processors require little power compared with electronic devices, so a battery that may power an electronic computer for eight hours might last more than 24 hours on a spintronic computer.

Gray says spintronics is"the next big step to push the limits of semiconductor technology that we see in every aspect of our lives: computers, cell phones, GPS (navigation) devices, iPods, TVs."

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New Kinds of Superconductivity? Physicists Demonstrate Coveted 'Spin-Orbit Coupling' in Atomic Gases

In the researchers' demonstration of spin-orbit coupling, two lasers allow an atom's motion to flip it between a pair of energy states. The new work, published inNature, demonstrates this effect for the first time in bosons, which make up one of the two major classes of particles. The same technique could be applied to fermions, the other major class of particles, according to the researchers. The special properties of fermions would make them ideal for studying new kinds of interactions between two particles -- for example those leading to novel"p-wave" superconductivity, which may enable a long-sought form of quantum computing known as topological quantum computation.

In an unexpected development, the team also discovered that the lasers modified how the atoms interacted with each other and caused atoms in one energy state to separate in space from atoms in the other energy state.

One of the most important phenomena in quantum physics, spin-orbit coupling describes the interplay that can occur between a particle's internal properties and its external properties. In atoms, it usually describes interactions that only occur within an atom: how an electron's orbit around an atom's core (nucleus) affects the orientation of the electron's internal bar-magnet-like"spin." In semiconductor materials such as gallium arsenide, spin-orbit coupling is an interaction between an electron's spin and its linear motion in a material.

"Spin-orbit coupling is often a bad thing," said JQI's Ian Spielman, senior author of the paper."Researchers make 'spintronic' devices out of gallium arsenide, and if you've prepared a spin in some desired orientation, the last thing you'd want it to do is to flip to some other spin when it's moving."

"But from the point of view of fundamental physics, spin-orbit coupling is really interesting," he said."It's what drives these new kinds of materials called 'topological insulators.'"

One of the hottest topics in physics right now, topological insulators are special materials in which location is everything: the ability of electrons to flow depends on where they are located within the material. Most regions of such a material are insulating, and electric current does not flow freely. But in a flat, two-dimensional topological insulator, current can flow freely along the edge in one direction for one type of spin, and the opposite direction for the opposite kind of spin. In 3-D topological insulators, electrons would flow freely on the surface but be inhibited inside the material. While researchers have been making higher and higher quality versions of this special class of material in solids, spin-orbit coupling in trapped ultracold gases of atoms could help realize topological insulators in their purest, most pristine form, as gases are free of impurity atoms and the other complexities of solid materials.

Usually, atoms do not exhibit the same kind of spin-orbit coupling as electrons exhibit in gallium-arsenide crystals. While each individual atom has its own spin-orbit coupling going on between its internal components (electrons and nucleus), the atom's overall motion generally is not affected by its internal energy state.

But the researchers were able to change that. In their experiment, researchers trapped and cooled a gas of about 200,000 rubidium-87 atoms down to 100 nanokelvins, 3 billion times colder than room temperature. The researchers selected a pair of energy states, analogous to the"spin-up" and"spin-down" states in an electron, from the available atomic energy levels. An atom could occupy either of these"pseudospin" states. Then researchers shined a pair of lasers on the atoms so as to change the relationship between the atom's energy and its momentum (its mass times velocity), and therefore its motion. This created spin-orbit coupling in the atom: the moving atom flipped between its two"spin" states at a rate that depended upon its velocity.

"This demonstrates that the idea of using laser light to create spin-orbit coupling in atoms works. This is all we expected to see," Spielman said."But something else really neat happened."

They turned up the intensity of their lasers, and atoms of one spin state began to repel the atoms in the other spin state, causing them to separate.

"We changed fundamentally how these atoms interacted with one another," Spielman said."We hadn't anticipated that and got lucky."

The rubidium atoms in the researchers' experiment were bosons, sociable particles that can all crowd into the same space even if they possess identical values in their properties including spin. But Spielman's calculations show that they could also create this same effect in ultracold gases of fermions. Fermions, the more antisocial type of atoms, cannot occupy the same space when they are in an identical state. And compared to other methods for creating new interactions between fermions, the spin states would be easier to control and longer lived.

A spin-orbit-coupled Fermi gas could interact with itself because the lasers effectively split each atom into two distinct components, each with its own spin state, and two such atoms with different velocities could then interact and pair up with one other. This kind of pairing opens up possibilities, Spielman said, for studying novel forms of superconductivity, particularly"p-wave" superconductivity, in which two paired atoms have a quantum-mechanical phase that depends on their relative orientation. Such p-wave superconductors may enable a form of quantum computing known as topological quantum computation.

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World's Smallest Magnetic Field Sensor: Researchers Explore Using Organic Molecules as Electronic Components

For the first time, a team of scientists from KIT and the Institut de Physique et Chimie des Matériaux de Strasbourg (IPCMS) have now succeeded in combining the concepts of spin electronics and molecular electronics in a single component consisting of a single molecule. Components based on this principle have a special potential, as they allow for the production of very small and highly efficient magnetic field sensors for read heads in hard disks or for non-volatile memories in order to further increase reading speed and data density.

Use of organic molecules as electronic components is being investigated extensively at the moment. Miniaturization is associated with the problem of the information being encoded with the help of the charge of the electron (current on or off). However, this requires a relatively high amount of energy. In spin electronics, the information is encoded in the intrinsic rotation of the electron, the spin. The advantage is that the spin is maintained even when switching off current supply, which means that the component can store information without any energy consumption.

The German-French research team has now combined these concepts. The organic molecule H₂-phthalocyanin that is also used as blue dye in ball pens exhibits a strong dependence of its resistance, if it is trapped between spin-polarized, i.e. magnetic electrodes. This effect was first observed in purely metal contacts by Albert Fert and Peter Grünberg. It is referred to as giant magnetoresistance and was acknowledged by the Nobel Prize for Physics in 2007.

The giant magnetoresistance effect on single molecules was demonstrated at KIT within the framework of a combined experimental and theoretical project of CFN and a German-French graduate school in cooperation with the IPCMS, Strasbourg. The results of the scientists are now presented in the journalNature Nanotechnology.

Karlsruhe Institute of Technology (KIT) is a public corporation and state institution of Baden-Wuerttemberg, Germany. It fulfills the mission of a university and the mission of a national research center of the Helmholtz Association. KIT focuses on a knowledge triangle that links the tasks of research, teaching, and innovation.

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Next-Generation Electronic Devices: Conduction, Surface States in Topological Insulator Nanoribbons Controlled

Perhaps most importantly, the surfaces of topological insulators enable the transport of spin-polarized electrons while preventing the"scattering" typically associated with power consumption, in which electrons deviate from their trajectory, resulting in dissipation.

Because of such characteristics, these materials hold great potential for use in future transistors, memory devices and magnetic sensors that are highly energy efficient and require less power.

In a study published Feb. 13 inNature Nanotechnology, researchers from UCLA's Henry Samueli School of Engineering and Applied Science and from the materials division of Australia's University of Queensland show the promise of surface-conduction channels in topological insulator nanoribbons made of bismuth telluride and demonstrate that surface states in these nanoribbons are"tunable" -- able to be turned on and off depending on the position of the Fermi level.

"Our finding enables a variety of opportunities in building potential new-generation, low-dissipation nanoelectronic and spintronic devices, from magnetic sensing to storage," said Kang L. Wang, the Raytheon Professor of Electrical Engineering at UCLA Engineering, whose team carried out the research.

Bismuth telluride is well known as a thermoelectric material and has also been predicted to be a three-dimensional topological insulator with robust and unique surface states. Recent experiments with bismuth telluride bulk materials have also suggested two-dimensional conduction channels originating from the surface states. But it has been a great challenge to modify surface conduction, because of dominant bulk contribution due to impurities and thermal excitations in such small-band-gap semiconductors.

The development of topological insulator nanoribbons has helped. With their large surface-to-volume ratios, these nanoribbons significantly enhance surface conditions and enable surface manipulation by external means.

Wang and his team used thin bismuth telluride nanoribbons as conducting channels in field-effect transistor structures. These rely on an electric field to control the Fermi level and hence the conductivity of a channel. The researchers were able to demonstrate for the first time the possibility of controlling surface states in topological insulator nanostructures.

"We have demonstrated a clear surface conduction by partially removing the bulk conduction using an external electric field," said Faxian Xiu, a UCLA staff research associate and lead author of the study."By properly tuning the gate voltage, very high surface conduction was achieved, up to 51 percent, which represents the highest values in topological insulators."

"This research is very exciting because of the possibility to build nanodevices with a novel operating principle," said Wang, who is also associate director of the California NanoSystems Institute (CNSI) at UCLA."Very similar to the development of graphene, the topological insulators could be made into high-speed transistors and ultra-high-sensitivity sensors."

The new findings shed light on the controllability of the surface spin states in topological insulator nanoribbons and demonstrate significant progress toward high surface electric conditions for practical device applications. The next step for Wang's team is to produce high-speed devices based on their discovery.

"The ideal scenario is to achieve 100 percent surface conduction with a complete insulating state in the bulk," Xiu said."Based on the current work, we are targeting high-performance transistors with power consumption that is much less than the conventional complementary metal-oxide semiconductors (CMOS) technology used typically in today's electronics."

Study collaborators Jin Zou, a professor of materials engineering at the University of Queensland; Yong Wang, a Queensland International Fellow; and Zou's team at the division of materials at the University of Queensland contributed significantly to this work. A portion of the research was also done in Alexandros Shailos' lab at UCLA.

The study was funded by the Focus Center Research Program -- Center on Functional Engineered Nano Architectonics (FENA) at UCLA Engineering; the U.S. Defense Advanced Research Projects Agency (DARPA); and the Australian Research Council. The research on topological insulators was pioneered by FENA's Shoucheng Zhang, a professor of physics at Stanford University.

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Physicists Isolate Bound States in Graphene-Superconductor Junctions

Led by University of Illinois physics professor Nadya Mason, the group published its findings in the journalNature Physics.

When a current is applied to a normal conductor, such as metal or graphene, it flows through the material as a stream of single electrons. By contrast, electrons travel in pairs in superconductors. Yet when a normal material is sandwiched between superconductors, the normal metal can carry the supercurrent.

Normal metals can adopt superconducting capacity because the paired electrons from the superconductor are translated to special electron-hole pairs in the normal metal, called Andreev bound states (ABS).

"If you have two superconductors with a normal metal between, you can actually transport the superconductivity across the normal material via these bound states, even though the normal material doesn't have the electron pairing that the superconductors do," Mason said.

ABS are extremely difficult to measure or to observe directly. Researchers can measure conduction and overall magnitude of a current, but have not been able to study individual ABS to understand the fundamental physics contributing to these unique states.

Mason's group developed a method of isolating individual ABS by connecting superconducting probes to tiny, nanoscale flakes of graphene called quantum dots. This confined the ABS to discrete energy levels within the quantum dot, allowing the researchers to measure the superconducting ABS individually and even to manipulate them.

"Before this, it wasn't really possible to understand the fundamentals of what is transporting the current," Mason said."Watching an individual bound state allows you to change one parameter and see how one mode changes. You can really get at a systematic understanding. It also allows you to manipulate ABS to use them for different things that just couldn't be done before."

Superconductor junctions have been proposed for use as superconducting transistors or bits for quantum computers, called qubits. Greater understanding of ABS may enable other applications as well. In addition, it may be possible to use the superconducting graphene quantum dots themselves as solid-state qubits.

"This is a unique case where we found something that we couldn't have discovered without using all of these different elements -- without the graphene, or the superconductor, or the quantum dot, it wouldn't have worked. All of these are really necessary to see this unusual state," Mason said.

The U.S. Department of Energy supported this work, conducted at the Frederick Seitz Materials Research Laboratory at Illinois.

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Ultrafast Quantum Computer Closer: Ten Billion Bits of Entanglement Achieved in Silicon

The researchers used high magnetic fields and low temperatures to produce entanglement between the electron and the nucleus of an atom of phosphorus embedded in a highly purified silicon crystal. The electron and the nucleus behave as a tiny magnet, or 'spin', each of which can represent a bit of quantum information. Suitably controlled, these spins can interact with each other to be coaxed into an entangled state -- the most basic state that cannot be mimicked by a conventional computer.

An international team from the UK, Japan, Canada and Germany, report their achievement in the journalNature.

'The key to generating entanglement was to first align all the spins by using high magnetic fields and low temperatures,' said Stephanie Simmons of Oxford University's Department of Materials, first author of the report. 'Once this has been achieved, the spins can be made to interact with each other using carefully timed microwave and radiofrequency pulses in order to create the entanglement, and then prove that it has been made.'

The work has important implications for integration with existing technology as it uses dopant atoms in silicon, the foundation of the modern computer chip. The procedure was applied in parallel to a vast number of phosphorus atoms.

'Creating 10 billion entangled pairs in silicon with high fidelity is an important step forward for us,' said co-author Dr John Morton of Oxford University's Department of Materials who led the team. 'We now need to deal with the challenge of coupling these pairs together to build a scalable quantum computer in silicon.'

In recent years quantum entanglement has been recognised as a key ingredient in building new technologies that harness quantum properties. Famously described by Einstein as"spooky action at distance" -- when two objects are entangled it is impossible to describe one without also describing the other and the measurement of one object will reveal information about the other object even if they are separated by thousands of miles.

Creating true entanglement involves crossing the barrier between the ordinary uncertainty encountered in our everyday lives and the strange uncertainties of the quantum world. For example, flipping a coin there is a 50% chance that it comes up heads and 50% tails, but we would never imagine the coin could land with both heads and tails facing upwards simultaneously: a quantum object such as the electron spin can do just that.

Dr Morton said: 'At high temperatures there is simply a 50/50 mixture of spins pointing in different directions but, under the right conditions, all the spins can be made to point in two opposing directions at the same time. Achieving this was critical to the generation of spin entanglement.'

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Graphene and 'Spintronics' Combo Looks Promising

Graphene, a two-dimensional crystalline form of carbon, is being touted as a sort of"Holy Grail" of materials. It boasts properties such as a breaking strength 200 times greater than steel and, of great interest to the semiconductor and data storage industries, electric currents that can blaze through it 100 times faster than in silicon.

Spintronic devices are being hotly pursued because they promise to be smaller, more versatile, and much faster than today's electronics."Spin" is a quantum mechanical property that arises when a particle's intrinsic rotational momentum creates a tiny magnetic field. And spin has a direction, either"up" or"down." The direction can encode data in the 0s and 1s of the binary system, with the key here being that spin-based data storage doesn't disappear when the electric current stops.

"There is strong research interest in spintronic devices that process information using electron spins, because these novel devices offer better performance than traditional electronic devices and will likely replace them one day," says Kwok Sum Chan, professor of physics at the City University of Hong Kong"Graphene is an important material for spintronic devices because its electron spin can maintain its direction for a long time and, as a result, information stored isn't easily lost."

It is, however, difficult to generate a spin current in graphene, which would be a key part of carrying information in a graphene spintronic device. Chan and colleagues came up with a method to do just that. It involves using spin splitting in monolayer graphene generated by ferromagnetic proximity effect and adiabatic (a process that is slow compared to the speed of the electrons in the device) quantum pumping. They can control the degree of polarization of the spin current by varying the Fermi energy (the level in the distribution of electron energies in a solid at which a quantum state is equally likely to be occupied or empty), which they say is very important for meeting various application requirements.

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